(Hong Kong)
Product Summary
The IS63LV1024-12T is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024-12T is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. TheIS63LV1024-12Toperates from a single 3.3V power supply and all inputs are TTL-compatible.
Parametrics
IS63LV1024-12T absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5 V; (2)TSTG, Storage Temperature: –65 to +150℃; (3)PT, Power Dissipation: 1.0 W.
Features
IS63LV1024-12T features: (1)High-speed access times: 8, 10, 12 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply; (9); (10)Lead-free Available.
Diagrams
 |
 IS63LV1024 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
IS63LV1024-10J |
ISSI |
SRAM 1Mb 128Kx8 10ns 3.3v |
Data Sheet |
Negotiable |
|
||||||||||||
|
IS63LV1024-10J-TR |
ISSI |
SRAM 1Mb 128Kx8 10ns 3.3v |
Data Sheet |
Negotiable |
|
||||||||||||
|
IS63LV1024-10K |
ISSI |
SRAM 1Mb 128Kx8 10ns 3.3v |
Data Sheet |
Negotiable |
|
||||||||||||
|
IS63LV1024-10KI |
ISSI |
SRAM 1M (128Kx8) 10ns Async SRAM 3.3v |
Data Sheet |
|
|
||||||||||||
|
IS63LV1024-10KI-TR |
ISSI |
SRAM 1M (128Kx8) 10ns Async SRAM 3.3v |
Data Sheet |
|
|
||||||||||||
