(Hong Kong)
Product Summary
The GT25Q101 is a silicon N-channel IGBT. The device is suitable for high power switching applications and motor control applications.
Parametrics
GT25Q101 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 25A; 1ms, ICP: 50A; (4)collector power dissipation (Tc=25℃), PC: 200W; (5)junction temperature, Tj: 150℃; (6)storage temperature range, Tstg: -55 to 150℃.
Features
GT25Q101 features: (1)high input impedance; (2)high speed: tf=0.5μ max; (3)low saturation voltage: VCE(sat)=4.0V max; (4)enhancement mode.
Diagrams
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 GT25 |
Other |
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Data Sheet |
Negotiable |
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GT2531 |
Other |
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Data Sheet |
Negotiable |
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GT25G101 |
Other |
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Data Sheet |
Negotiable |
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GT25G101(Q) |
Toshiba |
IGBT Transistors IGBT 400V 170A |
Data Sheet |
Negotiable |
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GT25Q102 |
Other |
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Data Sheet |
Negotiable |
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GT25Q102(Q) |
Toshiba |
IGBT Transistors IGBT, 1200V, 25A |
Data Sheet |
Negotiable |
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