Product Summary

The 2N1671B is a PN BAR-TYPE silicon unijunction transistor. It is designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except.

Parametrics

2N1671B absolute maximum ratings: (1)Base 1 – Emitter Reverse Voltage: 30 V; (2)Base 2 – Emitter Reverse Voltage: 30 V; (3)Interbase Voltage: 35 V; (4)RMS Emitter Current: 50 mA; (5)Emitter Peak Current: 2A; (6)Total Power Dissipation: 450 mW; (7)Maximum Junction: 150 ℃; (8)Storage Temperature Range: -55 to +150 ℃.

Features

2N1671B features: (1)Highly Stable Negative Resistance and Firing Voltage; (2)Low Firing Current; (3)High Pulse Curent Capabilities; (4)Simplified Circuit Design.

Diagrams

2N1613
2N1613
Central Semiconductor
Transistors Bipolar (BJT) NPN Gen Pur SS
Data Sheet
0-1: $0.77
1-25: $0.71
25-100: $0.67
100-250: $0.61
2N1616
2N1616
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Data Sheet
Negotiable 
2N1617
2N1617
Other

Data Sheet
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2N1671
2N1671
Other

Data Sheet
Negotiable