(Hong Kong)
Product Summary
The GT40T301 is a Silicon N Channel IGBT. It is suitable for Parallel Resonance Inverter Switching Applications.
Parametrics
GT40T301 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1500 V; (2)Gate-emitter voltage, VGES: ±25 V; (3)Collector current, DC, IC: 40A; 1 ms, ICP: 80A; (4)Emitter-collector forward current, D,C IECF: 30A; 1 ms, IECPF: 80A; (5)Collector power dissipation (Tc =25℃), PC: 200 W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -55~150℃.
Features
GT40T301 features: (1)FRD included between emitter and collector; (2)Enhancement mode type; (3)High speed IGBT : tf = 0.25μs (typ.) (IC = 40 A); FRD: trr = 0.7μs (typ.) (di/dt = .20 A/μs); (4)Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 GT40T301 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
GT40T301(Q) |
Toshiba |
IGBT Transistors IGBT 1500V 40A |
Data Sheet |
Negotiable |
|
||||
