Product Summary
The CAT28F020NI-12 is manufactured using Catalyst advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The CAT28F020NI-12 is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages. The CAT28F020NI-12 is a high speed 256K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
Parametrics
CAT28F020NI-12 absolute maximum ratings: (1)Temperature Under Bias: –55℃ to +95℃; (2)Storage Temperature: –65℃ to +150℃; (3)Voltage on Any Pin with; (4)Respect to Ground(1): –2.0V to +VCC + 2.0V; (5)Voltage on Pin A9 with Respect to Ground(1): –2.0V to +13.5V; (6)VPP with Respect to Ground during Program/Erase(1): –2.0V to +14.0V; (7)VCC with Respect to Ground(1): –2.0V to +7.0V; (8)Package Power Dissipation Capability (TA = 25℃): 1.0 W; (9)Lead Soldering Temperature (10 secs): 300℃; (10)Output Short Circuit Current(2): 100 mA.
Features
CAT28F020NI-12 features: (1)Fast Read Access Time: 70/90/120 ns; (2)Low Power CMOS Dissipation; (3)High Speed Programming; (4)0.5 Seconds Typical Chip-Erase; (5)12.0V ± 5% Programming and Erase Voltage; (6)Commercial, Industrial and Automotive Temperature Ranges; (7)Stop Timer for Program/Erase; (8)On-Chip Address and Data Latches; (9)JEDEC Standard Pinouts; (10)100,000 Program/Erase Cycles; (11)10 Year Data Retention; (12)Electronic Signature.
Diagrams

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![]() CAT28F020NI-12 |
![]() ON Semiconductor |
![]() Flash (256x8) 2M |
![]() Data Sheet |
![]() Negotiable |
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![]() Other |
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![]() Catalyst (ON Semiconductor) |
![]() NVRAM 256bit (64x4) 5V |
![]() Data Sheet |
![]() Negotiable |
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![]() Negotiable |
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![]() CAT22C10LI30 |
![]() ON Semiconductor |
![]() NVRAM 256bit (64x4) 5V |
![]() Data Sheet |
![]() Negotiable |
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(Hong Kong)












