(Hong Kong)
Product Summary
The BSM25GD120DN2 is an IGBT Power Module.
Parametrics
BSM25GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 35A when TC = 25℃; 25A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 70A when TC = 25℃; 50A when TC = 80℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 200W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to +125℃; (9)Thermal resistance, chip case RthJC: ≤0.6 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40/125/56 sec.
Features
BSM25GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM25GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 25A FL BRIDGE |
Data Sheet |
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BSM25GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 35A |
Data Sheet |
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