Product Summary

The SGH80N60UF is a ultra-fast IGBT. Fairchild UF Insulated Gate Bipolar Transistor SGH80N60UF provides low conduction and switching losses. The SGH80N60UF is designed for applications such as motor control and general inverter where high speed switching is a required feature. The applications of the SGH80N60UF are: AC & DC motor controls,general purpose inverters, robotics, and servo controls.

Parametrics

SGH80N60UF absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 80 A; (4)Collector Current @ TC = 100℃: 40 A; (5)ICM (1) Pulsed Collector Current: 220 A; (6)IF Diode Continuous Forward Current @ TC = 100℃: 25 A; (7)IFM Diode Maximum Forward Current: 280 A; (8)PD Maximum Power Dissipation @ TC = 25℃: 195 W; (9)Maximum Power Dissipation @ TC = 100℃: 78 W; (10)TJ Operating Junction Temperature: -55 to +150 ℃; (11)Tstg Storage Temperature Range: -55 to +150 ℃; (12)Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds: 300 ℃.

Features

SGH80N60UF features: (1)High speed switching; (2)Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A; (3)High input impedance.

Diagrams

SGH80N60UF Package Dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SGH80N60UF
SGH80N60UF
Other

Data Sheet
Negotiable 
SGH80N60UFD
SGH80N60UFD
Other

Data Sheet
Negotiable 
SGH80N60UFTU
SGH80N60UFTU
Fairchild Semiconductor
IGBT Transistors Dis High Perf IGBT
Data Sheet
0-245: $2.83
245-250: $2.60
250-500: $2.37
500-1000: $2.06
SGH80N60UFDTU
SGH80N60UFDTU
Fairchild Semiconductor
IGBT Transistors N-CH/100V/0.58/28A
Data Sheet
0-244: $3.56
244-250: $3.28
250-500: $2.99
500-1000: $2.60