Product Summary
The MBR20200CT using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz.
Parametrics
MBR20200CT maximum ratings: (1)Peak Repetitive Reverse Voltage VRRM: 200 Volts; (2)Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM: 1.0 Amp; (3)Operating Junction Temperature TJ: –65 to +150 ℃; (4)Storage Temperature Tstg: –65 to +175 ℃; (5)Voltage Rate of Change (Rated VR) dv/dt: 10,000 V/ms; (6)Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz): IFSM 150 Amps; (7)Peak Repetitive Forward Current, Per Leg(Rated VR, Square Wave, 20 kHz) TC = 90℃ IFRM: 20 Amps.
Features
MBR20200CT features: (1)200 Volt Blocking Voltage; (2)Low Forward Voltage Drop; (3)Guardring for Stress Protection and High dv/dt Capability; (4)(10,000 V/ms); (5)Dual Diode Construction Terminals 1 and 3 Must be; (6)Connected for Parallel Operation at Full Rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MBR20200CT |
Taiwan Semiconductor |
Schottky (Diodes & Rectifiers) 20 Amp 200 Volt Dual |
Data Sheet |
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MBR20200CTG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 20A 200V |
Data Sheet |
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MBR20200CTTU |
Fairchild Semiconductor |
Schottky (Diodes & Rectifiers) Dual High Voltage |
Data Sheet |
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