IRGPH50MD2

bipolar transistor, TO247, 84A

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Price:: US $1.80~2.40 / piece [Get Latest Price]

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	US $1.80~2.40

PartNumber:: IRGPH50MD2

Brand:: International Rectifier - IR | Pack: TO | D/C: 09+

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Products Upload time: 2011-07-05

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Part Number:IRGPH50MD2
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Product Summary

The IRGPH50MD2 is an insulated gate bipolar transistor with ultrafast soft recovery diode. It provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. The IRGPH50MD2 is especially suited for motor control and other applications requiring short circuit withstand capability.

Parametrics

IRGPH50MD2 absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 42A; (3)IC @ TC = 100℃, Continuous Collector Current: 23A; (4)ICM, Pulsed Collector Current: 84 A; (5)ILM, Clamped Inductive Load Current: 84A; (6)IF @ TC = 100℃, Diode Continuous Forward Current: 16A; (7)IFM, Diode Maximum Forward Current: 84A; (8)tsc, Short Circuit Withstand Time: 10μs; (9)VGE, Gate-to-Emitter Voltage: ±20 V; (10)PD @ TC = 25℃, Maximum Power Dissipation: 200 W; (11)PD @ TC = 100℃, Maximum Power Dissipation: 78W; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (13)Soldering Temperature, for 10 sec: 300℃ (0.063 in. (1.6mm) from case); (14)Mounting torque, 6-32 or M3 screw: 10 lbf·n (1.1 N·m).

Features

IRGPH50MD2 features: (1)Short circuit rated -10μs @125℃, V GE = 15V; (2)Switching-loss rating includes all tail losses; (3)HEXFREDTM soft ultrafast diodes; (4)Optimized for medium operating frequency ( 1 to 10kHz) for Current vs. Frequency curve.