Product Summary

The 2SK410 is a Silicon N-Channel MOSFET. The applications of the 2SK410 include HF/VHF power amplifier.

Parametrics

2SK410 absolute maximum ratings: (1)Drain to source voltage: 180 V; (2)Gate to source voltage: ±20 V; (3)Drain current: 8 A; (4)Channel dissipation Pch*1: 120 W; (5)Channel temperature: 150 ℃; (6)Storage temperature: –55 to +150 ℃.

Features

2SK410 features: (1)High breakdown voltage; (2)You can decrease handling current.; (3)Included gate protection diode; (4)No secondary–breakdown; (5)Wide area of safe operation; (6)Simple bias circuitry; (7)No thermal runaway.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SK410
2SK410

Other


Data Sheet

Negotiable 
2SK4100LS
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Data Sheet

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Data Sheet

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2SK4101LS
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Data Sheet

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Data Sheet

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Toshiba

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Data Sheet

Negotiable