IRFZ44N

Power MOSFET, 55V, 49A, 17.5Ω, TO220, Advanced Process Technology, Ultra Low On-Resistance

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Price:: US $0.32~0.40 / piece [Get Latest Price]

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PartNumber:: IRFZ44N

Brand:: International Rectifier - IR | Pack: TO | D/C: 08+

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Products Upload time: 2011-07-01

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Product Summary

The IRFZ44N is a Power MOSFET. The IRFZ44N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ44N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package of the IRFZ44N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRFZ44N absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 49A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35 A; (3)IDM, Pulsed Drain Current: 160A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20V; (7)IAR, Avalanche Current: 25 A; (8)EAR, Repetitive Avalanche Energy: 9.4 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (10)TJ, Operating Junction and: -55 to + 175℃; (11)TSTG, Storage Temperature Range Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1Nm).

Features

IRFZ44N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.