(Hong Kong)
Product Summary
The ISL9R860P2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The ISL9R860P2 exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The applications of the ISL9R860P2 include Switch Mode Power Supplies, Hard Switched PFC Boost Diode, UPS Free Wheeling Diode, Motor Drive FWD, SMPS FWD and Snubber Diode.
Parametrics
ISL9R860P2 absolute maximum ratings: (1)VRRM, Peak Repetitive Reverse Voltage: 600 V; (2)VRWM, Working Peak Reverse Voltage: 600 V; (3)VR, DC Blocking Voltage: 600 V; (4)IF(AV), Average Rectified Forward Current (TC = 147℃): 8 A; (5)IFRM, Repetitive Peak Surge Current (20kHz Square Wave): 16 A; (6)IFSM, Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz): 100 A; (7)PD, Power Dissipation: 85 W; (8)EAVL, Avalanche Energy (1A, 40mH): 20 mJ; (9)TJ, TSTG, Operating and Storage Temperature Range: -55 to 175℃; (10)TL, TPKG, Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s: 300℃.
Features
ISL9R860P2 features: (1)Soft Recovery: tb / ta > 2.5; (2)Fast Recovery: trr < 25ns; (3)Operating Temperature: 175℃; (4)Reverse Voltage: 600V.
Diagrams
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 ISL9R860P2 |
Fairchild Semiconductor |
Rectifiers 8a 600V Stealth Single |
Data Sheet |
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ISL9R860P2_Q |
Fairchild Semiconductor |
Rectifiers 8a 600V Stealth Single |
Data Sheet |
Negotiable |
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