(Hong Kong)
Product Summary
The G20N50C1D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The G20N50C1D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The G20N50C1D used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The G20N50C1D is ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.
Parametrics
G20N50C1D absolute maximum ratings: (1)Collector-Emitter Voltage, BVCES: 500 V; (2)Collector-Gate Voltage RGE = 1MW, BVCGR: 500 V; (3)Collector Current Continuous at TC = +25℃, IC25: 26 A; at TC = +9℃, IC90: 20 A; (4)Collector Current Pulsed, ICM: 35 A; (5)Gate-Emitter Voltage Continuous, VGES: ±20 V; (6)Diode Forward Current at TC = +25℃,IF25: 26 A; at TC = +90℃,IF90: 20 A; (7)Power Dissipation Total at TC = +25℃, PD: 75 W; (8)Power Dissipation Derating TC > +25℃: 0.8 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to +150℃; (10)Maximum Lead Temperature for Soldering, TL: 260℃.
Features
G20N50C1D features: (1)20A, 500V; (2)Latch Free Operation; (3)Typical Fall Time < 500ns; (4)High Input Impedance; (5)Low Conduction Loss; (6)With Anti-Parallel Diode; (7)tRR < 60ns.
Diagrams
