(Hong Kong)
Product Summary
The D1040UK is a gold metallised multi-purpose silicon DMOS RF FET.
Parametrics
D1040UK absolute maximum ratings: (1)PD Power Dissipation: 438W; (2)BVDSS Drain – Source Breakdown Voltage: 70V; (3)BVGSS Gate – Source Breakdown Voltage: ±20V; (4)ID(sat) Drain Current: 35A; (5)Tstg Storage Temperature: –65 to 150℃; (6)Tj Maximum Operating Junction Temperature: 200℃.
Features
D1040UK features: (1)Simplified amplifier design; (2)Suitable for broad band applications; (3)LOW Crss; (4)Simple bias circuits; (5)Low noise; (6)High gain 16 dB minimum.
Diagrams
 |
 D1049N12T |
Infineon Technologies |
Rectifiers 1.2KV 1.65KA |
Data Sheet |
Negotiable |
|
||||
|
D1049N14T |
Infineon Technologies |
Rectifiers 1.4KV 1.65KA |
Data Sheet |
Negotiable |
|
||||
|
D1049N16T |
Infineon Technologies |
Rectifiers Diode |
Data Sheet |
Negotiable |
|
||||
|
D1049N18T |
Infineon Technologies |
Discrete Semiconductor Modules 1800V 2590A 57MM |
Data Sheet |
Negotiable |
|
||||
 |
D104M69Z5VH63L0 |
Vishay/BC Components |
Ceramic Disc Capacitors Axial 0.1uF 100volts Z5U +/-20% |
Data Sheet |
Negotiable |
|
||||
