Product Summary
The BTS840S2 is a N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input, diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS technology. The device can provide embedded protective functions. Applications of the BTS840S2 include μC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads, All types of resistive, inductive and capacitve loads, Most suitable for loads with high inrush currents, so as lamps and Replaces electromechanical relays, fuses and discrete circuits.
Parametrics
BTS840S2 absolute maximum ratings: (1)Supply voltage (overvoltage protection), Vbb: 43 V; (2)Supply voltage for full short circuit protection Tj,start =-40 to+150℃, Vbb: 34 V; (3)Load current (Short-circuit current), IL: self-limited; (4)Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI = 2 Ω, td = 200 ms; IN= low or high, each channel loaded with RL = 1.0 Ω, VLoaddump: 60 V; (5)Operating temperature range, Tj: -40 to +150℃; (6)Storage temperature range, Tstg: -55 to +150℃; (7)Power dissipation (DC) (all channels active), Ptot: 3.8W when Ta = 25℃; 2.0W when Ta = 85℃; (8)Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150℃), ZL: 100mH when IL = 4 A, EAS = 1.13J, 0Ω one channel; 4.4mH when IL = 12 A, EAS = 430mJ, 0Ω one channel; 2.0mH when IL = 24 A, EAS = 800mJ, 0Ω two parallel channels; (9)Electrostatic discharge capability (ESD) (Human Body Model), VESD: 1.0KV when IN; 4.0KV when ST, IS; 8.0KV when out to all other pins shorted; (10)Input voltage (DC), VIN: -10 to +16 V; (11)Current through input pin (DC), IIN: ±2.0mA; (12)Current through status pin (DC), IST: ±5.0mA; (13)Current through current sense pin (DC), IIS: ±14mA.
Features
BTS840S2 features: (1)CMOS compatible input; (2)Undervoltage and overvoltage shutdown with auto-restart and hysteresis; (3)Fast demagnetization of inductive loads; (4)Logic ground independent from load ground; (5)Short circuit protection; (6)Overload protection; (7)Current limitation; (8)Thermal shutdown; (9)Overvoltage protection (including load dump) with external resistor; (10)Reverse battery protection with external resistor; (11)Loss of ground and loss of Vbb protection; (12)Electrostatic discharge protection (ESD).
Diagrams
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BTS840S2 |
Infineon Technologies |
Power Switch ICs - POE / LAN PROFET Smart HiSide Pwr SW 2 Ch |
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BTS824R |
Infineon Technologies |
Power Switch ICs - POE / LAN Smart Hi-Side Pwr SW 4 Channel |
Data Sheet |
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BTS840S2 |
Infineon Technologies |
Power Switch ICs - POE / LAN PROFET Smart HiSide Pwr SW 2 Ch |
Data Sheet |
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