(Hong Kong)
Product Summary
The BLF861A is a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor.
Parametrics
BLF861A maximum ratings: (1)ID: 18 A; (2)VDS: 65 V; (3)VGS: ±15 V; (4)PDISS: 318 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 0.55 ℃/W.
Features
BLF861A features: (1)Internal input-output matching; (2)Omnigol TM Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF861A |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
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BLF861A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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