Product Summary

The BLF177 is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for industrial and military applications in the HF/VHF frequency range. The BLF177 is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads of BLF177 are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section for further information.

Parametrics

BLF177 absolute maximum ratings: (1)VDS, drain-source voltage: 110 V max; (2)±VGS, gate-source voltage: 20 V max; (3)ID, DC drain current: 16 A max; (4)Ptot, total power dissipation: 220 W max when up to Tmb = 25℃; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃ max.

Features

BLF177 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF177
BLF177
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-15: $42.00
15-25: $37.80
25-50: $33.60
50-100: $30.24
BLF177,112
BLF177,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 150W HF-VHF
Data Sheet
0-1: $39.63
1-25: $36.98
25-100: $34.33
BLF177C
BLF177C
NXP Semiconductors
Transistors RF MOSFET Power VDMOS TNS
Data Sheet
Negotiable 
BLF177C,112
BLF177C,112
NXP Semiconductors
Transistors RF MOSFET Power VDMOS TNS
Data Sheet
Negotiable 
BLF177CR
BLF177CR
NXP Semiconductors
Transistors RF MOSFET Power VDMOS TNS
Data Sheet
Negotiable 
BLF177CR,112
BLF177CR,112
NXP Semiconductors
Transistors RF MOSFET Power VDMOS TNS
Data Sheet
Negotiable