(Hong Kong)
Product Summary
The BLF177 is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for industrial and military applications in the HF/VHF frequency range. The BLF177 is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads of BLF177 are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section for further information.
Parametrics
BLF177 absolute maximum ratings: (1)VDS, drain-source voltage: 110 V max; (2)±VGS, gate-source voltage: 20 V max; (3)ID, DC drain current: 16 A max; (4)Ptot, total power dissipation: 220 W max when up to Tmb = 25℃; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃ max.
Features
BLF177 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BLF177 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF177,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W HF-VHF |
Data Sheet |
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BLF177C |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177C,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177CR |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177CR,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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